Minos MDT18N10D

Minos · FETs & Power MOSFETs · MPN MDT18N10D

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Specifications

Gate Charge(Qg)16nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation31W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)115mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

N-Channel 100V 18A 31W Surface Mount TO-252

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