Minos MD9N90

Minos · FETs & Power MOSFETs · MPN MD9N90

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Specifications

Gate Charge(Qg)60nC@10V
Drain to Source Voltage900V
Current - Continuous Drain(Id)9A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation350W
Reverse Transfer Capacitance (Crss@Vds)23pF
RDS(on)970mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.53nF

Technical details

N-Channel 900V 9A 350W Through Hole TO-3P

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