Minos MD50N50

Minos · FETs & Power MOSFETs · MPN MD50N50

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Specifications

Gate Charge(Qg)153nC@10V
Drain to Source Voltage500V
Current - Continuous Drain(Id)50A
Operating Temperature --40℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)29.7pF
RDS(on)90mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.8579nF

Technical details

N-Channel 500V 50A 250W Through Hole TO-247

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