Minos MD200N08

Minos · FETs & Power MOSFETs · MPN MD200N08

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Specifications

Gate Charge(Qg)257nC@10V
Drain to Source Voltage80V
Current - Continuous Drain(Id)200A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation270W
Reverse Transfer Capacitance (Crss@Vds)810pF
RDS(on)3.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)13.2nF

Technical details

N-Channel 80V 200A 270W Through Hole TO-247

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