Minos MD100N20

Minos · FETs & Power MOSFETs · MPN MD100N20

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Specifications

Gate Charge(Qg)152nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation390W
Reverse Transfer Capacitance (Crss@Vds)57pF
RDS(on)23mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.65nF

Technical details

N-Channel 200V 100A 390W Through Hole TO-247

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