Minos IRFP260N

Minos · FETs & Power MOSFETs · MPN IRFP260N

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)244nC
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)280pF
RDS(on)50mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.538nF
TypeN-Channel

Technical details

N-Channel 200V 50A 250W Through Hole TO-247

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