Minos IRF840

Minos · FETs & Power MOSFETs · MPN IRF840

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Specifications

Gate Charge(Qg)25nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)195pF
Current - Continuous Drain(Id)8A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation134W
RDS(on)730mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)20pF
Number1 N-channel
Input Capacitance(Ciss)1.57nF
TypeN-Channel

Technical details

N-Channel 500V 8A 134W Through Hole TO-220

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