Minos · FETs & Power MOSFETs · MPN IRF830
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| Gate Charge(Qg) | 26nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.3V |
| Pd - Power Dissipation | 38W |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| RDS(on) | 1.25Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 657pF |
N-Channel 500V 5A 38W Through Hole TO-220