Minos IRF630N

Minos · FETs & Power MOSFETs · MPN IRF630N

No reviews yet — be the first to review Minos IRF630N.

Specifications

Gate Charge(Qg)12nC
Drain to Source Voltage200V
Output Capacitance(Coss)90pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)8.6pF
RDS(on)260mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)550pF
TypeN-Channel

Technical details

N-Channel 200V 9A 75W Through Hole TO-220

Related FETs & Power MOSFETs