Minos IRF5210

Minos · FETs & Power MOSFETs · MPN IRF5210

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage110V
Output Capacitance(Coss)190pF
Current - Continuous Drain(Id)35A
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation180W
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)32mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.315nF
TypeP-Channel

Technical details

P-Channel 110V 35A 180W Through Hole TO-220

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