Minos E13009L-MNS

Minos · Transistors (BJTs) · MPN E13009L-MNS

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Specifications

Current - Collector Cutoff1mA
Transition frequency(fT)4MHz
Collector - Emitter Voltage VCEO400V
Emitter-Base Voltage VEBO9V
DC Current Gain40
Pd - Power Dissipation100W
type-
Current - Collector(Ic)12A
Vce Saturation(VCE(sat))3V
Operating Temperature-

Technical details

Bipolar (BJT) Transistor 400V 12A 4MHz 100W Through Hole TO-3P

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