MICRONE · FETs & Power MOSFETs · MPN MEM4N60A3G
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 33W |
| Reverse Transfer Capacitance (Crss@Vds) | 19.7pF |
| RDS(on) | 2.3Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 676pF |
N-Channel 600V 4A 33W Through Hole TO-220F-3