MICRONE MEM2N60A3G

MICRONE · FETs & Power MOSFETs · MPN MEM2N60A3G

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Specifications

Gate Charge(Qg)7.84nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)61pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation41W
Reverse Transfer Capacitance (Crss@Vds)16pF
RDS(on)4.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)347pF
TypeN-Channel

Technical details

N-Channel 600V 2A 41W Through Hole TO-220F(TO-220IS)

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