MICRONE · FETs & Power MOSFETs · MPN MEM12N65A3G
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| Gate Charge(Qg) | 24.15nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 152pF |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 51W |
| Reverse Transfer Capacitance (Crss@Vds) | 4.5pF |
| RDS(on) | 640mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.476nF |
| Type | N-Channel |
N-Channel 650V 12A 51W Through Hole TO-220F