MICROCHIP · FETs & Power MOSFETs · MPN VP2106N3-G
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| Drain to Source Voltage | 60V |
|---|---|
| Current - Continuous Drain(Id) | 500mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 1W |
| RDS(on) | 12Ω@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 60pF |
60V 500mA 1W 12Ω@10V 1 P-Channel TO-92-3 Single FETs, MOSFETs RoHS