MICROCHIP VP2106N3-G

MICROCHIP · FETs & Power MOSFETs · MPN VP2106N3-G

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Specifications

Drain to Source Voltage60V
Current - Continuous Drain(Id)500mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation1W
RDS(on)12Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)60pF

Technical details

60V 500mA 1W 12Ω@10V 1 P-Channel TO-92-3 Single FETs, MOSFETs RoHS

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