MICROCHIP VP0109N3-G

MICROCHIP · FETs & Power MOSFETs · MPN VP0109N3-G

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage90V
Output Capacitance(Coss)30pF
Current - Continuous Drain(Id)500mA
Operating Temperature --
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)8pF
RDS(on)8Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)60pF
TypeP-Channel

Technical details

90V 500mA 3.5V 1W 8Ω@10V 1 P-Channel P-Channel TO-92-3 Single FETs, MOSFETs RoHS

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