MICROCHIP VN2460N8-G

MICROCHIP · FETs & Power MOSFETs · MPN VN2460N8-G

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage600V
Output Capacitance(Coss)50pF
Current - Continuous Drain(Id)200mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)25Ω@4.5V
Number1 N-channel
Input Capacitance(Ciss)150pF
TypeN-Channel

Technical details

600V 200mA 4V 1.6W 25Ω@4.5V 1 N-channel N-Channel SOT-89-3 Single FETs, MOSFETs RoHS

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