MICROCHIP VN2210N3-G

MICROCHIP · FETs & Power MOSFETs · MPN VN2210N3-G

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Specifications

Drain to Source Voltage100V
Current - Continuous Drain(Id)1.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation740mW
RDS(on)350mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)500pF

Technical details

100V 1.2A 2.4V 740mW 350mΩ@10V 1 N-channel TO-92-3 Single FETs, MOSFETs RoHS

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