MICROCHIP VN2110K1-G

MICROCHIP · FETs & Power MOSFETs · MPN VN2110K1-G

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage100V
Output Capacitance(Coss)25pF
Current - Continuous Drain(Id)200mA
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation360mW
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)50pF
TypeN-Channel

Technical details

100V 200mA 2.4V 360mW 4Ω@10V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS

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