MICROCHIP · FETs & Power MOSFETs · MPN VN0109N3-G
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| Drain to Source Voltage | 90V |
|---|---|
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 800mV |
| Pd - Power Dissipation | 1W |
| RDS(on) | 2.5Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 65pF |
90V 800mV 1W 2.5Ω@10V 1 N-channel TO-92-3 Single FETs, MOSFETs RoHS