MICROCHIP VN0106N3-G-P003

MICROCHIP · FETs & Power MOSFETs · MPN VN0106N3-G-P003

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Specifications

Drain to Source Voltage60V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))800mV
Pd - Power Dissipation1W
RDS(on)3Ω@10V
Number1 N-channel
Input Capacitance(Ciss)65pF

Technical details

60V 800mV 1W 3Ω@10V 1 N-channel TO-92-3 Single FETs, MOSFETs RoHS

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