MICROCHIP VN0106N3-G

MICROCHIP · FETs & Power MOSFETs · MPN VN0106N3-G

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Specifications

Drain to Source Voltage60V
Output Capacitance(Coss)25pF
Current - Continuous Drain(Id)350mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)8pF
RDS(on)5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)65pF
TypeN-Channel

Technical details

60V 350mA 2.4V 1W 5Ω@10V 1 N-channel N-Channel TO-92-3 Single FETs, MOSFETs RoHS

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