MICROCHIP TP5335K1-G

MICROCHIP · FETs & Power MOSFETs · MPN TP5335K1-G

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Specifications

Drain to Source Voltage350V
Current - Continuous Drain(Id)400mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation360mW
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)30Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)80pF

Technical details

350V 400mA 2.4V 360mW 30Ω@10V 1 P-Channel SOT-23-3 Single FETs, MOSFETs RoHS

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