MICROCHIP TP5322N8-G

MICROCHIP · FETs & Power MOSFETs · MPN TP5322N8-G

No reviews yet — be the first to review MICROCHIP TP5322N8-G.

Specifications

Output Capacitance(Coss)45pF
Pd - Power Dissipation900mW
Configuration-
Gate Charge(Qg)-
Drain to Source Voltage220V
Current - Continuous Drain(Id)700mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)8Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)110pF

Technical details

900mW 220V 700mA 2.4V 8Ω@10V 1 P-Channel P-Channel SOT-89-3 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs