MICROCHIP TP2635N3-G

MICROCHIP · FETs & Power MOSFETs · MPN TP2635N3-G

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Specifications

Drain to Source Voltage350V
Current - Continuous Drain(Id)180mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))800mV
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)15Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)300pF

Technical details

350V 180mA 800mV 1W 15Ω@10V 1 P-Channel TO-92-3 Single FETs, MOSFETs RoHS

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