MICROCHIP TN5335N8-G

MICROCHIP · FETs & Power MOSFETs · MPN TN5335N8-G

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Specifications

Drain to Source Voltage350V
Current - Continuous Drain(Id)750mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)22pF
RDS(on)15Ω@10V
Number1 N-channel
Input Capacitance(Ciss)110pF

Technical details

350V 750mA 2V 1.6W 15Ω@10V 1 N-channel SOT-89-3 Single FETs, MOSFETs RoHS

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