MICROCHIP TN5325K1-G

MICROCHIP · FETs & Power MOSFETs · MPN TN5325K1-G

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Specifications

Drain to Source Voltage250V
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)150mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation360mW
Reverse Transfer Capacitance (Crss@Vds)23pF
RDS(on)7Ω@10V
Number1 N-channel
Input Capacitance(Ciss)110pF
TypeN-Channel

Technical details

N-Channel 250V 360mW Surface Mount SOT-23-3

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