MICROCHIP TN2130K1-G

MICROCHIP · FETs & Power MOSFETs · MPN TN2130K1-G

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Specifications

Drain to Source Voltage300V
Output Capacitance(Coss)15pF
Current - Continuous Drain(Id)250mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation360mW
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)25Ω@4.5V
Number1 N-channel
Input Capacitance(Ciss)50pF
Vgs±20V
TypeN-Channel

Technical details

300V 250mA 2.4V 360mW 25Ω@4.5V 1 N-channel N-Channel SOT-23-3 Single FETs, MOSFETs RoHS

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