MICROCHIP · FETs & Power MOSFETs · MPN TN2106N3-G
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| Drain to Source Voltage | 60V |
|---|---|
| Output Capacitance(Coss) | 17pF |
| Current - Continuous Drain(Id) | 300mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 600mV |
| Pd - Power Dissipation | 740mW |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| RDS(on) | 2.5Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 50pF |
| Type | N-Channel |
N-Channel 60V 0.74W Through Hole TO-92