MICROCHIP TN2106N3-G

MICROCHIP · FETs & Power MOSFETs · MPN TN2106N3-G

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Specifications

Drain to Source Voltage60V
Output Capacitance(Coss)17pF
Current - Continuous Drain(Id)300mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))600mV
Pd - Power Dissipation740mW
Reverse Transfer Capacitance (Crss@Vds)8pF
RDS(on)2.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)50pF
TypeN-Channel

Technical details

N-Channel 60V 0.74W Through Hole TO-92

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