MICROCHIP · FETs & Power MOSFETs · MPN TN2106K1-G
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 17pF |
| Current - Continuous Drain(Id) | 280mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 360mW |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| RDS(on) | 2.5Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 35pF |
| Type | N-Channel |
N-Channel 60V 280mA 360mW Surface Mount SOT-23-3