MICROCHIP TN0604N3-G

MICROCHIP · FETs & Power MOSFETs · MPN TN0604N3-G

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Specifications

Drain to Source Voltage40V
Output Capacitance(Coss)110pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation740mW
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)750mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)190pF
TypeN-Channel

Technical details

40V 4A 1.6V 740mW 750mΩ@10V 1 N-channel N-Channel TO-92-3 Single FETs, MOSFETs RoHS

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