MICROCHIP · FETs & Power MOSFETs · MPN TN0110N3-G-P002
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| Drain to Source Voltage | 100V |
|---|---|
| Current - Continuous Drain(Id) | 3.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | - |
| RDS(on) | 3Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 60pF |
100V 3.4A 2V 3Ω@10V 1 N-channel TO-92-3 Single FETs, MOSFETs RoHS