MICROCHIP · FETs & Power MOSFETs · MPN TN0110N3-G
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 35pF |
| Current - Continuous Drain(Id) | 350mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 1W |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| RDS(on) | 3Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 60pF |
| Type | N-Channel |
100V 350mA 2V 1W 3Ω@10V 1 N-channel N-Channel TO-92-3 Single FETs, MOSFETs RoHS