MICROCHIP TN0106N3-G

MICROCHIP · FETs & Power MOSFETs · MPN TN0106N3-G

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage60V
Output Capacitance(Coss)35pF
Current - Continuous Drain(Id)350mA
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)8pF
RDS(on)4.5Ω@4.5V
Number1 N-channel
Input Capacitance(Ciss)60pF
TypeN-Channel

Technical details

60V 350mA 2V 1W 4.5Ω@4.5V 1 N-channel N-Channel TO-92-3 Single FETs, MOSFETs RoHS

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