MICROCHIP TN0104N8-G

MICROCHIP · FETs & Power MOSFETs · MPN TN0104N8-G

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage40V
Output Capacitance(Coss)50pF
Current - Continuous Drain(Id)630mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)70pF
TypeN-Channel

Technical details

40V 630mA 1.6V 1.6W 2Ω@10V 1 N-channel N-Channel SOT-89-3 Single FETs, MOSFETs RoHS

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