MICROCHIP TC6320TG-G

MICROCHIP · FETs & Power MOSFETs · MPN TC6320TG-G

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Specifications

Current - Continuous Drain(Id)2A
RDS(on)8Ω@10V
Pd - Power Dissipation-
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage200V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)23pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)110pF
Gate Charge(Qg)-
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)60pF;55pF

Technical details

N-Channel+P-Channel Array 200V 2A Surface Mount SOIC-8

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