MICROCHIP MSCM20XM10T3XG

MICROCHIP · FETs & Power MOSFETs · MPN MSCM20XM10T3XG

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Specifications

Configuration-
Current - Continuous Drain(Id)108A
Pd - Power Dissipation341W
RDS(on)9.7mΩ@10V
Gate Threshold Voltage (Vgs(th))5V
Drain to Source Voltage200V
Reverse Transfer Capacitance (Crss@Vds)160pF
Number6 N-Channel
Input Capacitance(Ciss)10.7nF
Gate Charge(Qg)161nC@10V
Operating Temperature-40℃~+175℃
Output Capacitance(Coss)810pF

Technical details

108A 341W 9.7mΩ@10V 5V 6 N-Channel SP3X FET, MOSFET Arrays RoHS

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