MICROCHIP · FETs & Power MOSFETs · MPN MSCM20XM10T3XG
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| Configuration | - |
|---|---|
| Current - Continuous Drain(Id) | 108A |
| Pd - Power Dissipation | 341W |
| RDS(on) | 9.7mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Drain to Source Voltage | 200V |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF |
| Number | 6 N-Channel |
| Input Capacitance(Ciss) | 10.7nF |
| Gate Charge(Qg) | 161nC@10V |
| Operating Temperature | -40℃~+175℃ |
| Output Capacitance(Coss) | 810pF |
108A 341W 9.7mΩ@10V 5V 6 N-Channel SP3X FET, MOSFET Arrays RoHS