MICROCHIP LND150N3-G

MICROCHIP · FETs & Power MOSFETs · MPN LND150N3-G

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Specifications

Drain to Source Voltage500V
Current - Continuous Drain(Id)30mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation740mW
Reverse Transfer Capacitance (Crss@Vds)1pF
RDS(on)1kΩ@0V
Number1 N-channel
Input Capacitance(Ciss)10pF
TypeN-Channel

Technical details

N-Channel 500V Through Hole TO-92

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