MICROCHIP LND150K1-G

MICROCHIP · FETs & Power MOSFETs · MPN LND150K1-G

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage500V
Output Capacitance(Coss)3.5pF
Current - Continuous Drain(Id)13mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation360mW
Reverse Transfer Capacitance (Crss@Vds)1pF
RDS(on)850Ω@0V
Number1 N-channel
Input Capacitance(Ciss)10pF
Vgs±20V

Technical details

N-Channel 500V 13mA 0.36W Surface Mount SOT-23

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