MICROCHIP LND01K1-G

MICROCHIP · FETs & Power MOSFETs · MPN LND01K1-G

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage650V
Output Capacitance(Coss)32pF
Current - Continuous Drain(Id)330mA
Operating Temperature --25℃~+125℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation360mW
Reverse Transfer Capacitance (Crss@Vds)23pF
RDS(on)1.4Ω@0V
Number1 N-channel
Input Capacitance(Ciss)48pF
TypeN-Channel

Technical details

N-Channel 650V 330mA 0.36W Surface Mount SOT-23-5

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