MICROCHIP · FETs & Power MOSFETs · MPN APTM60H23FT1G
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| Configuration | - |
|---|---|
| Current - Continuous Drain(Id) | 20A |
| RDS(on) | 276mΩ@10V |
| Pd - Power Dissipation | 276W |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Drain to Source Voltage | 600V |
| Type | - |
| Reverse Transfer Capacitance (Crss@Vds) | 56pF |
| Number | 4 N-Channel |
| Input Capacitance(Ciss) | 5.316nF |
| Gate Charge(Qg) | 165nC@10V |
| Operating Temperature | -40℃~+150℃ |
20A 276mΩ@10V 276W 5V 4 N-Channel FET, MOSFET Arrays RoHS