MICROCHIP APTM50H14FT3G

MICROCHIP · FETs & Power MOSFETs · MPN APTM50H14FT3G

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Specifications

ConfigurationHalf-Bridge
Current - Continuous Drain(Id)26A
RDS(on)168mΩ@10V
Pd - Power Dissipation208W
Gate Threshold Voltage (Vgs(th))5V
Drain to Source Voltage500V
Number4 N-Channel
Input Capacitance(Ciss)3.259nF
Gate Charge(Qg)72nC@10V
Operating Temperature-40℃~+150℃

Technical details

26A 168mΩ@10V 208W 5V 4 N-Channel FET, MOSFET Arrays RoHS

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