MICROCHIP APTM50H10FT3G

MICROCHIP · FETs & Power MOSFETs · MPN APTM50H10FT3G

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Specifications

Configuration-
Current - Continuous Drain(Id)37A
RDS(on)120mΩ@10V
Pd - Power Dissipation312W
Gate Threshold Voltage (Vgs(th))5V
Drain to Source Voltage500V
Type-
Reverse Transfer Capacitance (Crss@Vds)61pF
Number4 N-Channel
Input Capacitance(Ciss)4.367nF
Gate Charge(Qg)96nC@10V
Operating Temperature-40℃~+150℃

Technical details

37A 120mΩ@10V 312W 5V 4 N-Channel FET, MOSFET Arrays RoHS

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