MICROCHIP · FETs & Power MOSFETs · MPN APTM120DA30CT1G
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| Gate Charge(Qg) | 560nC@10V |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 31A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 657W |
| RDS(on) | 360mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 14.56nF |
1.2kV 31A 3V 657W 360mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS