MICROCHIP · FETs & Power MOSFETs · MPN APTM10HM09FT3G
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| Configuration | Half-Bridge |
|---|---|
| Current - Continuous Drain(Id) | 139A |
| RDS(on) | 10mΩ@10V |
| Pd - Power Dissipation | 390W |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Drain to Source Voltage | 100V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 1.47nF |
| Number | - |
| Input Capacitance(Ciss) | 9.875nF |
| Gate Charge(Qg) | 350nC@10V |
| Operating Temperature | -40℃~+150℃ |
139A 10mΩ@10V 390W 4V FET, MOSFET Arrays RoHS