MICROCHIP · FETs & Power MOSFETs · MPN APTM10DSKM19T3G
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| Current - Continuous Drain(Id) | 70A |
|---|---|
| Pd - Power Dissipation | 208W |
| RDS(on) | 21mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Drain to Source Voltage | 100V |
| Type | - |
| Reverse Transfer Capacitance (Crss@Vds) | 800pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 5.1nF |
| Gate Charge(Qg) | 200nC@10V |
| Operating Temperature | -40℃~+150℃ |
| Output Capacitance(Coss) | 1.9nF |
70A 208W 21mΩ@10V 4V 2 N-Channel FET, MOSFET Arrays RoHS