MICROCHIP APTM10DAM02G

MICROCHIP · FETs & Power MOSFETs · MPN APTM10DAM02G

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Specifications

Gate Charge(Qg)1.36uC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)495A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.25kW
RDS(on)2.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)40nF

Technical details

100V 495A 2V 1.25kW 2.5mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS

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