MICROCHIP APTM100H46FT3G

MICROCHIP · FETs & Power MOSFETs · MPN APTM100H46FT3G

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Specifications

ConfigurationHalf-Bridge
Current - Continuous Drain(Id)19A
RDS(on)552mΩ@10V
Pd - Power Dissipation357W
Gate Threshold Voltage (Vgs(th))5V
Drain to Source Voltage1kV
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)92pF
Number-
Input Capacitance(Ciss)6.8nF
Gate Charge(Qg)260nC@10V
Operating Temperature-40℃~+150℃

Technical details

19A 552mΩ@10V 357W 5V FET, MOSFET Arrays RoHS

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