MICROCHIP APTM100H45SCTG

MICROCHIP · FETs & Power MOSFETs · MPN APTM100H45SCTG

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Specifications

ConfigurationFull-Bridge
Current - Continuous Drain(Id)18A
RDS(on)540mΩ@10V
Pd - Power Dissipation357W
Gate Threshold Voltage (Vgs(th))5V
Drain to Source Voltage1kV
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)120pF
Number4 N-Channel
Input Capacitance(Ciss)4.35nF
Gate Charge(Qg)154nC@10V
Operating Temperature-40℃~+150℃

Technical details

18A 540mΩ@10V 357W 5V 4 N-Channel FET, MOSFET Arrays RoHS

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