MICROCHIP · FETs & Power MOSFETs · MPN APTM100H45FT3G
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| Configuration | Half-Bridge |
|---|---|
| Current - Continuous Drain(Id) | 18A |
| RDS(on) | 540mΩ@10V |
| Pd - Power Dissipation | 357W |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Drain to Source Voltage | 1kV |
| Type | - |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF |
| Number | - |
| Input Capacitance(Ciss) | 4.35nF |
| Gate Charge(Qg) | 154nC@10V |
| Operating Temperature | -40℃~+150℃ |
18A 540mΩ@10V 357W 5V FET, MOSFET Arrays RoHS